Polarity-Tunable Field Effect Phototransistors.

Field-effect phototransistors feature gate voltage modulation, allowing dynamic performance control and significant signal amplification. A field-effect phototransistor can be designed to be inherently either unipolar or ambipolar in its response. However, conventionally, once a field-effect phototransistor has been fabricated, its polarity cannot be changed. Herein, a polarity-tunable field-effect phototransistor based on a graphene/ultrathin Al2O3/Si structure is demonstrated. Light can modulate the gating effect of the device and change the transfer characteristic curve from unipolar to ambipolar. This photoswitching in turn produces a significantly improved photocurrent signal. The introduction of an ultrathin Al2O3 interlayer also enables the phototransistor to achieve a responsivity in excess of 105 A/W, a 3 dB bandwidth of 100 kHz, a gain-bandwidth product of 9.14 × 1010 s-1, and a specific detectivity of 1.91 × 1013 Jones. This device architecture enables the gain-bandwidth trade-off in current field-effect phototransistors to be overcome, demonstrating the feasibility of simultaneous high-gain and fast-response photodetection.

Ultrahigh Photogain Short-Wave Infrared Detectors Enabled by Integrating Graphene and Hyperdoped Silicon.

Highly sensitive short-wave infrared (SWIR) detectors, compatible with the silicon-based complementary metal oxide semiconductor (CMOS) process, are regarded as the key enabling components in the miniaturized system for weak signal detection. To date, the high photogain devices are greatly limited by a large bias voltage, low-temperature refrigeration, narrow response band, and complex fabrication processes. Here, we demonstrate high photogain detectors working in the SWIR region at room temperature, which use graphene for charge transport and Te-hyperdoped silicon (Te-Si) for infrared absorption. The prolonged lifetime of carriers, combined with the built-in potential generated at the interface between the graphene and the Te-Si, leads to an ultrahigh photogain of 109 at room temperature (300 K) for 1.55 µm light. The gain can be improved to 1012, accompanied by a noise equivalent power (NEP) of 0.08 pW Hz-1/2 at 80 K. Moreover, the proposed device exhibits a NEP of 4.36 pW Hz-1/2 at 300 K at the wavelength of 2.7 µm, which is exceeding the working region of InGaAs detectors. This research shows that graphene can be used as an efficient platform for silicon-based SWIR detection and provides a strategy for the low-power, uncooled, high-gain infrared detectors compatible with the CMOS process.

Lateral Structured Phototransistor Based on Mesoscopic Graphene/Perovskite Heterojunctions.

Due to their outstanding optical properties and superior charge carrier mobilities, organometal halide perovskites have been widely investigated in photodetection and solar cell areas. In perovskites photodetection devices, their high optical absorption and excellent quantum efficiency contribute to the responsivity, even the specific detectivity. In this work, we developed a lateral phototransistor based on mesoscopic graphene/perovskite heterojunctions. Graphene nanowall shows a porous structure, and the spaces between graphene nanowall are much appropriated for perovskite crystalline to mount in. Hot carriers are excited in perovskite, which is followed by the holes' transfer to the graphene layer through the interfacial efficiently. Therefore, graphene plays the role of holes' collecting material and carriers' transporting channel. This charge transfer process is also verified by the luminescence spectra. We used the hybrid film to build phototransistor, which performed a high responsivity and specific detectivity of 2.0 × 103 A/W and 7.2 × 1010 Jones, respectively. To understand the photoconductive mechanism, the perovskite's passivation and the graphene photogating effect are proposed to contribute to the device's performance. This study provides new routes for the application of perovskite film in photodetection.

High-performance mid-infrared photodetection based on Bi2Se3 maze and free-standing nanoplates.

The pursuit of optoelectronic devices operating in mid-infrared regime is driven by both fundamental interests and commercial applications. The narrow bandgap (0.3 eV) of layered Bi2Se3 makes it a promising material for mid-infrared photodetection. However, the weak absorption of mid-infrared optical power and high dark current level restrict its performance. Here, a supply-control technique is applied to modulate the growth mode of Bi2Se3 crystal, and Bi2Se3 crystals with various morphologies are obtained. The nanoplates pattern transits from maze to freestanding when source mass was tuned. Due to the strong infrared absorption and photoelectric conversion efficiency of vertical Bi2Se3 nanoplates, the as-prepared vertical Bi2Se3 nanoplates/Si heterojunction shows excellent photoresponse and extremely low dark current. Among these devices based on different Bi2Se3 morphologies, freestanding nanoplates show the optimal mid-infrared characteristics, namely a photo-to-dark ratio of 2.0 × 104, a dark current of 0.21 pA, a response time of 23 ms, a specific detectivity of 6.1 × 1010 Jones (calculated) and 1.2 × 1010 Jones (measured) under 2.7 µm illumination and at room temperature. Notably, the specific detectivity of our devices are comparable to commercial InGaAs photodetectors. With the tunable- morphology growing technique and excellent photoresponding characteristics, Bi2Se3 nanomaterials are worth attention in optoelectronic field.

Effects of doping graphene on the performance of graphene-silicon hybrid photoconductive detectors.

The photoconductive detector based on a graphene-silicon heterostructure retains excellent optoelectrical properties, in which the graphene plays an indispensable role, acting as the carrier transporting channel. Herein, we systematically investigate by simulation and experiment how doping graphene will affect the performance of graphene-silicon hybrid photoconductors. Compared with lightly p-doped graphene devices, the responsivity can be made nine times better through increasing the p-type doping level. In addition, the net photocurrent can also be enhanced by about four times through increasing the n-type doping level of graphene. We attribute this improvement to the barrier height change adjusted by doping graphene, which can optimize the lifetime and transport of photocarriers. Such a graphene-doping method, that manipulates the junction region, could offer useful guidance for achieving high-performance graphene photodetectors.

Mechanistic Investigation of Surfactant-Free Emulsion Polymerization Using Magnetite Nanoparticles Modified by Citric Acid as Stabilizers.

Fe3O4-armored latexes were successfully synthesized by using modified Fe3O4 (IO) nanoparticles as stabilizers without a surfactant. The particle size, conversion, and particle number density of latex particles during the formation process were studied in detail. The surface charge density and the particle size evolutions of latexes were studied by dynamic light scattering. The use of scanning electron microscopy confirmed that IO nanoparticles were adsorbed on the polymer particle surface. Furthermore, the efficiency of iron oxide incorporation (IE) was evaluated by thermogravimetric analysis. The effect of pH, solid content, and zeta potential of IO nanoparticles on the results of polymerization was also discussed in detail. Attempts were made to explain the change of latex particle surface charge density by using Guy-Chapman-Stern's electric double layer theory. In addition, the effect of ionic strength of ammonium sulfate on particle number density of latex particles was described using P. John Feeney's equation. Finally, the mechanistic insights were discussed by studying polymerization kinetics.

Fast and Broadband Photoresponse of a Few-Layer GeSe Field-Effect Transistor with Direct Band Gaps.

Few-to-monolayer germanium selenide, a new IV-VI group layered material recently fabricated by mechanical exfoliation and subsequent laser thinning, is promising in very fast and broadband optoelectronic applications for its excellent stability, complicated band structures, inert surface properties, and being a natural p-type semiconductor. However, large-scale production of such few-layer GeSe devices with superior performance is still in early stages. In this study, field-effect transistors made of few-layer GeSe with direct band gaps are fabricated. Transistor performance with Schottky contact characteristics is measured at room temperature. A field-effect mobility of 4 cm2/(V s) and drain currents modulated both by holes and electrons are measured. Photoresponses as a function of illumination wavelength, power, and frequency are characterized. The few-layer GeSe transistor shows photoresponse to the illumination wavelengths from visible up to 1400 nm and a photoresponse rise (fall) time of 13 µs (19 µs), demonstrating very broadband and fast detection. The ambipolar behavior and the photoresponse characteristics demonstrate great potential of few-layer GeSe for applications in highly stable, very fast, and very broadband optoelectronic devices.

The primary considerations and image guided diagnosis of an infected urachal cyst in a pediatric patient.

Urachal cyst is a rare condition that is typically asymptomatic and will often have symptomatology that is misdiagnosed or missed. A urachal cyst occurs in 1 out of 5000 live-births, but is only clinically relevant in 1 out of 150,000 of the population often as an incidental finding. The urachus is the embryological remnant of the allantois, which connects the apex of the bladder to the umbilicus, and usually fully obliterates to become the median umbilical ligament. Urachal defects are uncommon and cysts are usually asymptomatic until infection results. An infected cyst may present mimicking a wide range of intra-abdominal and pelvic disorders, and accurate diagnosis is often delayed. Children may present with umbilical discharge; adults often have hematuria. Computed tomography (CT) and ultrasound are ideally suited for demonstrating urachal remnant diseases; however, infected urachal cysts commonly display increased echogenicity with ultrasoundsography and thick-walled cystic or mixed attenuation with CT. Drainage and excision of the urachal remnant is the definitive treatment.

Light Trapping in Conformal Graphene/Silicon Nanoholes for High-Performance Photodetectors.

Hybrid graphene/silicon heterojunctions have been widely utilized in photodetectors because of their unique characteristics of high sensitivity, fast response, and CMOS compatibility. However, the photoresponse is restricted by the high reflectance of planar silicon (up to 50%). Herein, an improved graphene/Si detector with excellent light absorption performance is proposed and demonstrated by directly growing graphene on the surface of silicon nanoholes (SiNHs). It is shown that the combination of SiNHs with conformal graphene provides superior interfaces for efficient light trapping and transport of the photoexcited carriers. A high absorption of up to 90% was achieved, and the conformal graphene/SiNH-based photodetectors exhibited a higher photoresponsivity (2720 A/W) and faster response (∼6.2 µs), compared with the counterpart of the planar graphene/Si, for which the corresponding values are 850 A/W and 51.3 µs. These results showcase the vital role of the material morphology in optoelectronic conversion and pave the way to explore novel high-performance heterojunction photodetectors.

Bandgap modulation of MoS2 monolayer by thermal annealing and quick cooling.

We developed a non-mechanical straining method to simultaneously modulate the bandgap and photoluminescence (PL) quantum efficiency of a synthesized molybdenum disulfide (MoS2) monolayer on SiO2, by vacuum annealing and subsequent quick cooling in ethanol. Influences of the thermal treatments at different temperatures from 100 °C to 600 °C on the PL and Raman spectra of the MoS2 monolayers are reported. A maximum PL peak intensity, twice that of the untreated counterparts under the same measurement conditions, was observed at the treating temperature of 200 °C. At the same time, approximately permanent tensile strains were induced, due to the quick cooling from high temperatures, which led to a red-shift of the direct optical bandgap. Modulation of the bandgap was achieved by changing the treating temperatures; nearly linear PL and Raman frequency shifts of ∼3.82 meV per 100 °C and ∼-0.28 cm-1/100 °C for A exciton photoluminescence and Raman E12g mode frequency were observed, respectively. The proposed thermal modulation promises a wide range of applications in functional 2D nanodevices and semiconductors. To our knowledge, our findings constitute the first demonstration of thermal engineering by combinational manipulation of annealing and quick cooling of the 2D transition-metal dichalcogenides.

Diode-pumped continuous wave and Q-switched operation of Nd:CaYAlO4 crystal.

The continuous wave (CW) and passively Q-switched performances of Nd:CaYAlO(4) crystal with both a- and c-cut were demonstrated. The CW output powers of 1.15 W and 1.26 W were obtained under the pump power of 8.96 W with slope efficiencies of 15.2% and 16.8% for a- and c-cut samples, respectively. As a result, new dual-wavelength all-solid-state lasers at 1080 nm and 1081 nm were achieved with c-cut crystal. By using Cr(4+):YAG wafer as saturable absorber, we performed Q-switching experiments. The highest average output powers and shortest pulse widths were measured to be 0.798 W, 10.6 ns and 0.537 W, 9.6 ns for a- and c-cut samples, respectively.

Spectral characterization and laser performance of a mixed crystal Nd:(LuxY1-x)3Al5O12.

An Nd-doped Lu(1.5)Y(1.5)Al(5)O(12) (Nd:LuYAG) crystal was obtained by Czochralski method. Absorption and emission spectra were recorded at low and room temperature. Continuous wave (CW) and passively Q-switched laser operations of Nd:LuYAG crystal were, to our knowledge, demonstrated for the first time. A CW output power of 1.67 W with slope efficiency of 39.8% was obtained. In the passively Q-switched operation, the shortest pulse width, largest pulse energy, and highest peak power were achieved to be 9.6 ns, 61.7µJ, and 6.4 kW, respectively, with Cr(4+):YAG crystals as the saturable absorbers.

Intra-gastric band erosion from an un-inflated Lap-Band: a case report.

The increasing prevalence of morbid obesity is of public health concern throughout the world, and surgical intervention seems to offer the only long-term solution to the problem. Gastric banding is one of the available options in the bariatric armamentarium. As more Lap-Bands are being inserted, intragastric erosion is increasingly being encountered as a major complication. The case of a 40-year-old man with intra-gastric band erosion is presented with the band never having been inflated, suggesting that additional factors may play a role in the development of erosions. The presentation, diagnostic modalities, and pathognomomic findings are discussed.